1 composite transistors XN4509 silicon npn epitaxial planer transistor for high-frequency amplification n features l two elements incorporated into one package. l reduction of the mounting area and assembly cost by one half. n basic part number of element l 2sc4561 2 elements n absolute maximum ratings (ta=25?c) 1 : collector (tr1) 4 : collector (tr2) 2 : base (tr2) 5 : base (tr1) 3 : emitter (tr2) 6 : emitter (tr1) eiaj : scC74 mini type package (6Cpin) unit: mm marking symbol: ao internal connection parameter symbol ratings unit collector to base voltage v cbo 50 v collector to emitter voltage v ceo 50 v emitter to base voltage v ebo 5v collector current i c 50 ma total power dissipation p t 200 mw junction temperature t j 150 ?c storage temperature t stg C55 to +150 ?c rating of element overall n electrical characteristics (ta=25?c) parameter symbol conditions min typ max unit collector to base voltage v cbo i c = 10 m a, i e = 0 50 v collector to emitter voltage v ceo i c = 1ma, i b = 0 50 v emitter to base voltage v ebo i e = 10 m a, i c = 0 5 v collector cutoff current i cbo v cb = 10v, i e = 0 0.1 m a i ceo v ce = 10v, i b = 0 100 m a forward current transfer ratio h fe v ce = 10v, i c = 2ma 200 500 collector to emitter saturation voltage v ce(sat) i c = 10ma, i b = 1ma 0.06 0.3 v transition frequency f t v cb = 10v, i e = C2ma, f = 200mhz 250 mhz collector output capacitance c ob v cb = 10v, i e = 0, f = 1mhz 1.5 pf 2.8 +0.2 ?.3 1.5 0.65 0.15 0.65 0.15 1 6 5 4 3 2 1.45 0.1 0.95 0.95 1.9 0.1 +0.25 ?.05 0.3 +0.1 ?.05 0.5 +0.1 ?.05 2.9 +0.2 ?.05 1.1 +0.2 ?.1 0.8 0.4 0.2 0 to 0.05 0.16 +0.1 ?.06 0.1 to 0.3 61 2 tr2 tr1 5 43
2 composite transistors XN4509 0 0 160 40 120 80 240 200 160 120 80 40 ambient temperature ta ( ?c ) total power dissipation p t ( mw ) 0 012 210 48 6 120 100 80 60 40 20 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25?c i b =300 a 100 a 150 a 200 a 250 a 50 a 0 60 50 40 30 20 10 base to emitter voltage v be ( v ) collector current i c ( ma ) 01.2 0.2 1.0 0.4 0.8 0.6 v ce =10v ta=75?c 25?c 25?c 0.01 0.03 13 0.1 0.3 1 3 10 30 100 10 30 100 300 1000 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75?c 25?c 25?c 0 0.1 0.3 600 500 400 300 200 100 1 3 10 30 100 forward current transfer ratio h fe collector current i c ( ma ) v ce =10v ta=75?c 25?c 25?c 0.1 0.3 1 3 10 30 100 transition frequency f t ( mhz ) emitter current i e ( ma ) 0 600 500 400 300 200 100 v cb =10v ta=25?c 0 1 6 5 4 3 2 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25?c p t ta i c v ce i c v be v ce(sat) i c h fe i c f t i e c ob v cb
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